InP-based HEMTs for the realization of ultra-high efficiency millimeter wave power amplifiers

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI:10.1109/CORNEL.1993.303126

M. Matloubian, L. Larson, A. Brown, L. Jelloian, L. Nguyen, M. Lui, T. Liu, J. Brown, M. Thompson, W. Lam, A. Kurdoghlian, R. Rhodes, M. Delaney, J. Pence

引用次数: 5

Abstract

The authors have conducted a systematic effort to improve the breakdown voltage of InP-based HEMTs without compromising their high frequency performance, and have demonstrated millimeter wave circuit results that are comparable to or exceed those of the best GaAs-based PHEMTs in the critical area of power-added efficiency and output power. This improvement was accomplished by a combination of developments in material growth and device design and fabrication.<>

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基于inp的hemt实现超高效率毫米波功率放大器

作者已经进行了系统的努力，在不影响其高频性能的情况下提高基于inp的hemt的击穿电压，并证明了毫米波电路结果在功率附加效率和输出功率的关键区域与最好的基于gaas的phemt相当或超过。这种改进是通过材料生长和设备设计与制造的发展相结合来实现的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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