Review and classification of gain cell eDRAM implementations

A. Teman, P. Meinerzhagen, A. Burg, A. Fish
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引用次数: 34

Abstract

With the increasing requirement of a high-density, high-performance, low-power alternative to traditional SRAM, Gain Cell (GC) embedded DRAMs have gained a renewed interest in recent years. Several industrial and academic publications have presented GC memory implementations for various target applications, including high-performance processor caches, wireless communication memories, and biomedical system storage. In this paper, we review and compare the recent publications, examining the design requirements and the implementation techniques that lead to achievement of the required design metrics of these applications.
增益单元eDRAM实现的回顾和分类
随着对高密度、高性能、低功耗替代传统SRAM的需求不断增加,增益单元(GC)嵌入式dram近年来重新引起了人们的兴趣。一些工业和学术出版物已经介绍了针对各种目标应用程序的GC内存实现,包括高性能处理器缓存、无线通信内存和生物医学系统存储。在本文中,我们回顾和比较了最近的出版物,检查了导致实现这些应用程序所需设计度量的设计要求和实现技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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