V. Novikov, D. Grigoryev, D. Bezrodnyy, S. Dvoretsky, M. Yakushev
{"title":"Local distribution of the material composition in the V-defect region of HgCdTe epitaxial films","authors":"V. Novikov, D. Grigoryev, D. Bezrodnyy, S. Dvoretsky, M. Yakushev","doi":"10.1109/ICIPRM.2016.7528604","DOIUrl":null,"url":null,"abstract":"In this paper the local distribution of the material composition in the V-defect region of HgCdTe epitaxial films is investigated. The local composition distribution is studied by the Kelvin Force Probe Microscopy method and scanning electron microscopy with energy dispersive X-ray analysis. It is demonstrated that in the V-defect region of a Hg1-xCdxTe epitaxial film inhomogeneous distribution of the material component composition is observed. Analysis of the obtained experimental data shows that V-defects are distinguished by an increased mercury content.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"46 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2016.7528604","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper the local distribution of the material composition in the V-defect region of HgCdTe epitaxial films is investigated. The local composition distribution is studied by the Kelvin Force Probe Microscopy method and scanning electron microscopy with energy dispersive X-ray analysis. It is demonstrated that in the V-defect region of a Hg1-xCdxTe epitaxial film inhomogeneous distribution of the material component composition is observed. Analysis of the obtained experimental data shows that V-defects are distinguished by an increased mercury content.