Negative-Capacitance FinFETs: Numerical Simulation, Compact Modeling and Circuit Evaluation

J. Duarte, Y.-K. Lin, Y. Liao, A. Sachid, M. Kao, H. Agarwal, P. Kushwaha, K. Chatterjee, D. Kwon, H.-L. Chang, S. Salahuddin, C. Hu
{"title":"Negative-Capacitance FinFETs: Numerical Simulation, Compact Modeling and Circuit Evaluation","authors":"J. Duarte, Y.-K. Lin, Y. Liao, A. Sachid, M. Kao, H. Agarwal, P. Kushwaha, K. Chatterjee, D. Kwon, H.-L. Chang, S. Salahuddin, C. Hu","doi":"10.1109/SISPAD.2018.8551641","DOIUrl":null,"url":null,"abstract":"A complete simulation framework is presented for Negative Capacitance FinFETs including Numerical Simulation, Compact Modeling, and Circuit Evaluation. A 2D Numerical Simulation for FinFETs coupled with the Landau’s Ferroelectric Model captures device characteristics. A new version of the distributed Negative-Capacitance FinFET Compact Model is also presented in this work, where influence of short-channel effects in Ferroelectric voltage amplification are newly incorporated. Finally, a detailed analysis, from an energy perspective, is presented for the gate voltage amplification of Negative Capacitance FinFETs in ring-oscillator circuits.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2018.8551641","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

Abstract

A complete simulation framework is presented for Negative Capacitance FinFETs including Numerical Simulation, Compact Modeling, and Circuit Evaluation. A 2D Numerical Simulation for FinFETs coupled with the Landau’s Ferroelectric Model captures device characteristics. A new version of the distributed Negative-Capacitance FinFET Compact Model is also presented in this work, where influence of short-channel effects in Ferroelectric voltage amplification are newly incorporated. Finally, a detailed analysis, from an energy perspective, is presented for the gate voltage amplification of Negative Capacitance FinFETs in ring-oscillator circuits.
负电容finfet:数值模拟,紧凑建模和电路评估
提出了一个完整的负电容finfet仿真框架,包括数值仿真、紧凑建模和电路评估。结合朗道铁电模型的finfet二维数值模拟捕获了器件特性。本文还提出了一个新版本的分布式负电容FinFET紧凑模型,其中新纳入了铁电电压放大中的短通道效应的影响。最后,从能量的角度详细分析了环振电路中负电容finfet的栅极电压放大。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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