A Wideband True Time Delay in GaAs pHMET MMIC

Dongning Hao, Wei Zhang
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Abstract

A controllable wideband true time delay based on 0.25 µm GaAs pHMET technology is proposed. The circuit adopts the modified trombone topology to reduce the variation of the insertion loss. Fourth-order and second-order all-pass networks (APN) are applied to the gate and drain respectively to form the step of 12ps delay. The 3-bit control voltage achieves the maximum delay range of 83ps, with the variation of insertion loss less than ±0.8dB. The operation frequency bandwidth is 8-18GHz, and the die area is 1.08mm2 with 110mW consumption.
GaAs pHMET MMIC中的宽带真时延
提出了一种基于0.25µm GaAs pHMET技术的可控宽带真时延。电路采用改进的长号拓扑结构,减小了插入损耗的变化。栅极和漏极分别采用四阶和二阶全通网络(APN),形成12ps延时阶跃。3位控制电压达到83ps的最大延时范围,插入损耗变化小于±0.8dB。工作频率带宽8-18GHz,芯片面积1.08mm2,功耗110mW。
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