Low-temperature micropower CJFET OpAmp with reduced Vzero value

V. Chumakov, N. Prokopenko, A. Bugakova, D. Denisenko, I. Pakhomov
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Abstract

The original circuitry of the operational amplifier (OpAmp) and its modifications based on complementary field-effect transistors with a control p-n junction (СJFET, JSC "Integral", Belarus) is considered. A feature of the proposed CJFET OpAmp scheme is the use of a special static mode stabilization circuit in the input differential stage and intermediate push-pull folded-cascode on identical uncontrolled JFET dynamic loads. Computer simulation of СJFET OpAmp in the LTSpice software environment (Analog Device, USA) was performed in a wide temperature range (from -197°С to 27°С) and exposure to a neutron flux (up to 1014 n/cm2). The proposed circuitry solutions increase the open-loop gain of the CJFET OpAmp to 75 dB and minimize the systematic component of the zero offset voltage (less than 600 μV). The mathematical analysis of the open-loop gain of the CJFET OpAmp is given in paper. The developed CJFET OpAmp circuitry is applicable in various analog and analog-to-digital interfaces (active RC-filters, normalizing converters, etc.) operating at low temperatures and exposure to radiation.
低电压零值的低温微功率CJFET运放
考虑了运算放大器(OpAmp)的原始电路及其基于具有控制pn结的互补场效应晶体管的修改(СJFET, JSC“Integral”,白俄罗斯)。所提出的CJFET OpAmp方案的一个特点是在相同的非受控JFET动态负载上,在输入差分级和中间推挽折叠级联中使用特殊的静态模式稳定电路。在LTSpice软件环境(Analog Device, USA)中对СJFET OpAmp进行了计算机模拟,温度范围很宽(从-197°С到27°С),暴露于中子通量(高达1014 n/cm2)。所提出的电路方案将CJFET OpAmp的开环增益提高到75 dB,并将零偏置电压(小于600 μV)的系统分量降到最低。本文对CJFET运放的开环增益进行了数学分析。开发的CJFET OpAmp电路适用于在低温和辐射下工作的各种模拟和模数接口(有源rc滤波器,归一化转换器等)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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