V. Chumakov, N. Prokopenko, A. Bugakova, D. Denisenko, I. Pakhomov
{"title":"Low-temperature micropower CJFET OpAmp with reduced Vzero value","authors":"V. Chumakov, N. Prokopenko, A. Bugakova, D. Denisenko, I. Pakhomov","doi":"10.1109/TELFOR52709.2021.9653420","DOIUrl":null,"url":null,"abstract":"The original circuitry of the operational amplifier (OpAmp) and its modifications based on complementary field-effect transistors with a control p-n junction (СJFET, JSC \"Integral\", Belarus) is considered. A feature of the proposed CJFET OpAmp scheme is the use of a special static mode stabilization circuit in the input differential stage and intermediate push-pull folded-cascode on identical uncontrolled JFET dynamic loads. Computer simulation of СJFET OpAmp in the LTSpice software environment (Analog Device, USA) was performed in a wide temperature range (from -197°С to 27°С) and exposure to a neutron flux (up to 1014 n/cm2). The proposed circuitry solutions increase the open-loop gain of the CJFET OpAmp to 75 dB and minimize the systematic component of the zero offset voltage (less than 600 μV). The mathematical analysis of the open-loop gain of the CJFET OpAmp is given in paper. The developed CJFET OpAmp circuitry is applicable in various analog and analog-to-digital interfaces (active RC-filters, normalizing converters, etc.) operating at low temperatures and exposure to radiation.","PeriodicalId":330449,"journal":{"name":"2021 29th Telecommunications Forum (TELFOR)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 29th Telecommunications Forum (TELFOR)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TELFOR52709.2021.9653420","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The original circuitry of the operational amplifier (OpAmp) and its modifications based on complementary field-effect transistors with a control p-n junction (СJFET, JSC "Integral", Belarus) is considered. A feature of the proposed CJFET OpAmp scheme is the use of a special static mode stabilization circuit in the input differential stage and intermediate push-pull folded-cascode on identical uncontrolled JFET dynamic loads. Computer simulation of СJFET OpAmp in the LTSpice software environment (Analog Device, USA) was performed in a wide temperature range (from -197°С to 27°С) and exposure to a neutron flux (up to 1014 n/cm2). The proposed circuitry solutions increase the open-loop gain of the CJFET OpAmp to 75 dB and minimize the systematic component of the zero offset voltage (less than 600 μV). The mathematical analysis of the open-loop gain of the CJFET OpAmp is given in paper. The developed CJFET OpAmp circuitry is applicable in various analog and analog-to-digital interfaces (active RC-filters, normalizing converters, etc.) operating at low temperatures and exposure to radiation.