Beam Test Of The SDC Double-sided Silicon Strip Detector

1993 IEEE Conference Record Nuclear Science Symposium and Medical Imaging Conference Pub Date : 1993-10-31 DOI:10.1109/NSSMIC.1993.701869

Y. Unno, F. Hinode, T. Akagi, T. Kohriki, N. Ujiie, Y. Iwata, T. Ohmoto, T. Ohsugi, T. Ohyama, T. Hatakenaka, N. Tamura, S. Kobayashi, A. Murakami, M. Tezuka, R. Takashima, T. Aso, H. Miyata, M. Daigo, M. Higuchi, I. Kipnis, H. Spieler, J. DeWitt, D. Dorfan, A. Grillo, B. Hubbard, J. Rahn, W. Rowe, H. Sadrozinski, A. Seiden, E. Spencer, A. Webster, M. Wilder, M. Frautschi, J. Matthews

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引用次数: 6

Abstract

A beam test was executed to evaluate the behavior of the first prototype radiation-hard double-sided silicon microstrip sensor for the SDC silicon tracking system. Pions of 4 GeV/c in a test bcamline at KEK illuminated three planes of detectors. Thc signals wcrc amplified, shaped, and discriminated with TEKZ bipolar analog LSI's, and the on-off levels were sampled at l0MHz clock with CMOS digiwl LSI's, asynchronously with beam triggers. The detectors were rotated in null and 1 .O Tesla magnetic fields. The efficiencies were found to be 98-9996. The position resolutions were 12.5pm. where the multi-strip hit fraction was 30-40%. There was no essential difference in the performance of the pand the n-sides. The multi-strip hit fraction showed a clear rotation and magnetic-field dependence. From the angles where the fractions were minimum in the 1T magnetic field, the Hall mobilities of the electrons and holes were obtained to be 1391k43 (clcctrons) and 325f30 (holes) cm2/Vs.

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SDC双面硅条探测器的光束测试

为了评估SDC硅跟踪系统的第一个原型辐射硬双面硅微带传感器的性能，进行了波束测试。在KEK的一条测试直线上，4gev /c的介子照亮了探测器的三个平面。信号用TEKZ双极模拟LSI进行放大、整形和鉴别，开关电平用CMOS数字LSI在10mhz时钟下异步采样，带波束触发器。探测器在零和0.1特斯拉磁场中旋转。效率为98-9996。位置决议为下午12点5分。其中多条带命中率为30-40%。正反两面的表现没有本质上的差别。多条带命中分数表现出明显的旋转和磁场依赖关系。从分数在1T磁场中最小的角度，得到电子和空穴的霍尔迁移率分别为1391k43(电子)和325f30(空穴)cm2/Vs。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1993 IEEE Conference Record Nuclear Science Symposium and Medical Imaging Conference

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