Efficiency Improvement of a H5 Transformerless Inverter with MOSFET-IGBT Hybrid Switches

H. B. Rea-Rios, G. Vázquez, J. M. Sosa, M. Juárez-Balderas, P. Martinez‐Rodriguez, D. Langarica
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Abstract

The PV systems present power losses due to the switching and conduction of the power semiconductors. Moreover, passive elements also produce power losses that reduce the efficiency. In general, the power losses vary along with the variations of the irradiance, thus, at low power, the efficiency is low while at rated power the efficiency is maximum. In order to increase the efficiency during low irradiance intervals, this paper proposes a method to improve the efficiency in a photovoltaic inverter by means of the implementation of a hybrid MOSFET-IGBT switch which has been implemented for the H5 topology. The proposed solution consists in the use of a MOSFET and an IGBT connected in parallel. The main idea is to take advantage of the lower losses of a MOSFET in low power and the lower losses of an IGBT in high power. The proposed idea is validated by means of simulations, demonstrating the feasibility of the hybrid switches. The results show an improvement in the European efficiency and the California Energy Commission (CEC) efficiency, in this case is the European efficiency where the improvement is higher, however the behavior of the results indicate the hybrid switch can achieve a higher efficiency with a higher power if it is compare with the using of only MOSFET or only IGBT.
采用MOSFET-IGBT混合开关的H5无变压器逆变器的效率提高
由于功率半导体的开关和传导,光伏系统存在功率损耗。此外,无源元件还会产生功率损耗,从而降低效率。一般来说,功率损耗随辐照度的变化而变化,因此,在低功率下,效率低,而在额定功率下,效率最高。为了提高低辐照度期间的效率,本文提出了一种提高光伏逆变器效率的方法,该方法通过实现H5拓扑的MOSFET-IGBT混合开关来提高效率。提出的解决方案包括使用一个MOSFET和一个IGBT并联连接。其主要思想是利用低功率MOSFET的低损耗和高功率IGBT的低损耗。通过仿真验证了所提出的思想,证明了混合开关的可行性。结果显示在欧洲效率和加州能源委员会(CEC)效率的改进,在这种情况下是欧洲效率的改进是更高的,但是结果的行为表明混合开关可以实现更高的效率与更高的功率,如果它是与使用仅MOSFET或仅IGBT相比。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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