An Oscillatory Neural Network with Programmable Resistive Synapses in 28 Nm CMOS

T. C. Jackson, S. Pagliarini, L. Pileggi
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引用次数: 26

Abstract

Implementing scalable and effective synaptic networks will enable neuromorphic computing to deliver on its promise of revolutionizing computing. RRAM represents the most promising technology for realizing the fully connected synapse network: By using programmable resistive elements as weights, RRAM can modulate the strength of synapses in a neural network architecture. Oscillatory Neural Networks (ONNs)that are based on phase-locked loop (PLL)neurons are compatible with the resistive synapses but otherwise rather impractical. In this paper, A PLL-free ONN is implemented in 28 nm CMOS and compared to its PLL-based counterpart. Our silicon results show that the PLL-free architecture is compatible with resistive synapses, addresses practical implementation issues for improved robustness, and demonstrates favorable energy consumption compared to state-of-the-art NNs.
具有可编程电阻突触的28纳米CMOS振荡神经网络
实现可扩展和有效的突触网络将使神经形态计算实现其革命性计算的承诺。RRAM代表了实现全连接突触网络最有前途的技术:通过使用可编程电阻元件作为权重,RRAM可以调节神经网络架构中突触的强度。基于锁相环(PLL)神经元的振荡神经网络(ONNs)与电阻性突触兼容,但在其他方面不切实际。在本文中,无锁相环的ONN在28纳米CMOS中实现,并与基于锁相环的ONN进行了比较。我们的硅结果表明,无锁相环架构与电阻突触兼容,解决了提高鲁棒性的实际实施问题,并且与最先进的神经网络相比,显示出有利的能耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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