DRAMPersist: Making DRAM Systems Persistent

Krishna T. Malladi, M. Awasthi, Hongzhong Zheng
{"title":"DRAMPersist: Making DRAM Systems Persistent","authors":"Krishna T. Malladi, M. Awasthi, Hongzhong Zheng","doi":"10.1145/2989081.2989110","DOIUrl":null,"url":null,"abstract":"Modern applications exercise main memory systems in different ways. A lot of scale-out, in-memory applications exploit a number of desirable properties provided by DRAM such as high capacity, low latency and high bandwidth. Although DRAM technology continues to scale aggressively, new resistive memory technologies are on the horizon, promising scalability, density and non-volatility. However, they still suffer from longer, asymmetric read-write latencies and have lower endurance as compared to DRAM. Considering these factors, scale-out, distributed applications will benefit greatly from main memory architectures that provide the non-volatility of new memory technologies, but still have DRAM-like latencies. To that end, we introduce DRAMPersist -- a novel mechanism to make main memory persistent and complement existing high speed storage, specifically geared for scale-out systems.","PeriodicalId":283512,"journal":{"name":"Proceedings of the Second International Symposium on Memory Systems","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Second International Symposium on Memory Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2989081.2989110","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Modern applications exercise main memory systems in different ways. A lot of scale-out, in-memory applications exploit a number of desirable properties provided by DRAM such as high capacity, low latency and high bandwidth. Although DRAM technology continues to scale aggressively, new resistive memory technologies are on the horizon, promising scalability, density and non-volatility. However, they still suffer from longer, asymmetric read-write latencies and have lower endurance as compared to DRAM. Considering these factors, scale-out, distributed applications will benefit greatly from main memory architectures that provide the non-volatility of new memory technologies, but still have DRAM-like latencies. To that end, we introduce DRAMPersist -- a novel mechanism to make main memory persistent and complement existing high speed storage, specifically geared for scale-out systems.
使DRAM系统持久
现代应用程序以不同的方式使用主存储系统。许多向外扩展、内存内应用程序利用了DRAM提供的许多理想属性,如高容量、低延迟和高带宽。尽管DRAM技术仍在不断扩大规模,但新的电阻式存储技术正在崭露头角,有望实现可扩展性、密度和非易失性。但是,与DRAM相比,它们仍然有较长的非对称读写延迟,并且具有较低的耐用性。考虑到这些因素,向外扩展的分布式应用程序将从主内存体系结构中受益匪浅,主内存体系结构提供了新内存技术的非易失性,但仍然具有类似dram的延迟。为此,我们引入了DRAMPersist——这是一种使主内存持久并补充现有高速存储的新机制,特别适用于横向扩展系统。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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