Comparative study of single Material gate and Dual Material gate Silicon-On-Insulator Junctionless Transistors

Abstract

A Dual material gate silicon on Insulator Junctionless Transistor (DMG SOI JLT) is proposed in this paper. It's characteristics is demonstrated & compared with a single Material gate Silicon On Insulator Junctionless Transistor (SMG SOI JLT) using EDA tools used for simulation. The result shows that the DMG-SOI JLT has current driving capability higher than the single Material gate silicon on Insulator junctionless Transistor. The potential distribution of DMG SOI JLT has an abrupt change the transition of two gates and enhances the electric field in the channel. The channel length decrease then DIBL and sub threshold slope variation is minimum in DMG SOI JLT compare to SMG SOI JLT. Transconductance of SMG SOI JLT is observed 0.25mS for channel length 20nm.