A new low temperature diffusion bonding technology between large-area, high-power devices and internal Mo electrodes using Au-Al films

Abstract

To realize large-area, high-power devices, low temperature diffusion bonding between Al electrodes on both sides of the device and Au-plated Mo internal electrode foils has been investigated. Bonding was feasible below 573 K due to the formation of Au-Al intermetallic compound. Substantial reduction of the mounting force while keeping contact uniform was also possible. Reliability of the bond type devices is predicted from metallurgical viewpoint.