A Fast-settling Temperature-Insensitive Voltage Buffer

Zhang Ya-cong, Chen Zhongjian, Lu Wengao, Gao Jun, Ji Lijiu, Zhao Baoying
{"title":"A Fast-settling Temperature-Insensitive Voltage Buffer","authors":"Zhang Ya-cong, Chen Zhongjian, Lu Wengao, Gao Jun, Ji Lijiu, Zhao Baoying","doi":"10.1109/EDSSC.2005.1635340","DOIUrl":null,"url":null,"abstract":"A fast-settling, temperature-insensitive voltage buffer is analyzed and designed. Class AB output stage in the buffer leads to high slew rate with relatively low power dissipation. The current switch not only sets the quiescent current of the output transistors, but also compensates the variation of Vth with temperature, which makes the buffer workable in a wide range of temperature. Simulation results show that the 0.1% settling time with 2V input step and 2OpF load is always less than 165ns when the temperature varies from 0°C to 100°C while the dissipation is less than 3mW. The die area without pads in 0.5um CMOS process is 350* 150um2.","PeriodicalId":429314,"journal":{"name":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2005.1635340","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

A fast-settling, temperature-insensitive voltage buffer is analyzed and designed. Class AB output stage in the buffer leads to high slew rate with relatively low power dissipation. The current switch not only sets the quiescent current of the output transistors, but also compensates the variation of Vth with temperature, which makes the buffer workable in a wide range of temperature. Simulation results show that the 0.1% settling time with 2V input step and 2OpF load is always less than 165ns when the temperature varies from 0°C to 100°C while the dissipation is less than 3mW. The die area without pads in 0.5um CMOS process is 350* 150um2.
一种快速沉降温度不敏感电压缓冲器
分析和设计了一种快速稳定、温度不敏感的电压缓冲器。缓冲器中的AB类输出级具有较高的摆幅率和相对较低的功耗。电流开关不仅可以设置输出晶体管的静态电流,还可以补偿v值随温度的变化,使缓冲器在很宽的温度范围内工作。仿真结果表明,当温度在0 ~ 100℃范围内变化时,输入阶跃为2V、负载为2OpF时,0.1%的稳定时间始终小于165ns,且功耗小于3mW。0.5um CMOS工艺中无焊盘的模具面积为350* 150um2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信