A plasma damage resistant ultra low-k hybrid dielectric structure for 45nm node copper dual-damascene interconnects

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345756

N. Nakamura, T. Yoshizawa, T. Watanabe, H. Miyajima, S. Nakao, N. Yamada, K. Fujita, N. Matsunaga, H. Shibata

引用次数: 6

Abstract

A plasma damage resistant hybrid (polyarylene ether (PAR)/SiOC) dielectric structure using the ultra low-k (ULK) films with k value of 2.2 was demonstrated for Cu dual-damascene (DD) interconnects. The reliability issues attributed to plasma process induced damage to ULK films were clarified and resolved. As well as ULK film selection with plasma damage resistance, insertion of a low-k buffer layer with k value of 3.0 between SiOC and PAE and damage restoration process using hydrophobic treatment were found to be most important factors for robust ULK process integration.

查看原文本刊更多论文

一种用于45nm节点铜双砷互连的抗等离子体损伤超低k混合介电结构

采用k值为2.2的超低k (ULK)薄膜制备了一种抗等离子体损伤的聚芳醚(PAR)/SiOC杂化介电结构。由等离子体工艺引起的ULK膜损伤的可靠性问题得到了澄清和解决。研究发现，ULK薄膜选择具有抗等离子体损伤能力、在SiOC和PAE之间插入k值为3.0的低k缓冲层以及采用疏水处理的损伤恢复过程是实现ULK工艺集成的最重要因素。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

自引率

0.00%

发文量