Influence of concentration of emission centers in the form of windows through the film from the not stochiometric oxide of silicon on field emission of silicon of the carbon implanted by ions

Abstract

Use of field emission cathodes with high density of electronic current is capable to improve characteristics of electrovacuum devices and to give additional acceleration in development of vacuum microelectronics. For obtaining high density of current it is necessary to increase efficiency and concentration of emission centers. Improvement of field emission of characteristics at production on the flat autocathode of the distributed emission centers in the form of the windows done through a dielectric film is experimentally shown.