Real-Time Dead-Time Optimization in a GaN-Based Boost Converter Using a Digital Controller

Mohsin Asad, A. Singha
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引用次数: 3

Abstract

The Gallium-Nitride (GaN) based converters can operate in a high frequency range without compromising the efficiency as compared to silicon based converters. However, the reverse conduction loss during dead-time in GaN degrades the efficiency; thus, optimization of dead-time is required to improve the efficiency. This paper proposes a real-time dead-time optimization controller for the synchronous boost converter. The proposed controller samples only the inductor current and output voltage at the rate of switching frequency to determine the optimal dead-time. Thus, this is suitable for high-frequency converters. Furthermore, the proposed controller requires only a few switching cycles to compute the optimal dead-time. A prototype of the boost converter is developed using GaN FET from GaN System and the proposed dead-time controller is implemented using a TI digital controller.
基于数字控制器的gan升压变换器的实时死区优化
与硅基变换器相比,氮化镓(GaN)基变换器可以在高频率范围内工作,而不会影响效率。然而,氮化镓在死区期间的反向传导损耗降低了效率;因此,需要优化死区时间来提高效率。提出了一种同步升压变换器的实时死区优化控制器。该控制器仅以开关频率的速率采样电感电流和输出电压,以确定最佳死区时间。因此,这适用于高频变换器。此外,所提出的控制器只需要几个切换周期来计算最优死区时间。利用GaN系统的GaN场效应管开发了升压变换器的原型,并使用TI数字控制器实现了所提出的死区时间控制器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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