{"title":"Real-Time Dead-Time Optimization in a GaN-Based Boost Converter Using a Digital Controller","authors":"Mohsin Asad, A. Singha","doi":"10.1109/UEMCON53757.2021.9666693","DOIUrl":null,"url":null,"abstract":"The Gallium-Nitride (GaN) based converters can operate in a high frequency range without compromising the efficiency as compared to silicon based converters. However, the reverse conduction loss during dead-time in GaN degrades the efficiency; thus, optimization of dead-time is required to improve the efficiency. This paper proposes a real-time dead-time optimization controller for the synchronous boost converter. The proposed controller samples only the inductor current and output voltage at the rate of switching frequency to determine the optimal dead-time. Thus, this is suitable for high-frequency converters. Furthermore, the proposed controller requires only a few switching cycles to compute the optimal dead-time. A prototype of the boost converter is developed using GaN FET from GaN System and the proposed dead-time controller is implemented using a TI digital controller.","PeriodicalId":127072,"journal":{"name":"2021 IEEE 12th Annual Ubiquitous Computing, Electronics & Mobile Communication Conference (UEMCON)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 12th Annual Ubiquitous Computing, Electronics & Mobile Communication Conference (UEMCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/UEMCON53757.2021.9666693","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The Gallium-Nitride (GaN) based converters can operate in a high frequency range without compromising the efficiency as compared to silicon based converters. However, the reverse conduction loss during dead-time in GaN degrades the efficiency; thus, optimization of dead-time is required to improve the efficiency. This paper proposes a real-time dead-time optimization controller for the synchronous boost converter. The proposed controller samples only the inductor current and output voltage at the rate of switching frequency to determine the optimal dead-time. Thus, this is suitable for high-frequency converters. Furthermore, the proposed controller requires only a few switching cycles to compute the optimal dead-time. A prototype of the boost converter is developed using GaN FET from GaN System and the proposed dead-time controller is implemented using a TI digital controller.