High-gain InP-based quantum dot lasers emitting at 1.3 μm

Abstract

An InP-based quantum dot (QD) laser with InAs QDs emitting around 1.3 μm wavelength was realized. In comparison to C-band QD lasers, a modified growth process enhancing the nucleation of smaller QDs was developed, which allows the emission at the desired wavelength and preserves a high dot density. The influence of growth parameters on the formation of homogenous QDs was investigated. Broad area and ridge waveguide lasers were processed and first material and device results will be presented. A high internal quantum efficiency of 0.8 and a record value in the modal gain of more than 90 cm−1 for a laser with 6 QD layers were obtained, which relates to 15 cm−1 per QD layer. Temperature dependent laser characteristics show best T0 values up to 250 K between 20 and 70 °C.