A 2 cycle 1 Mbit 4 way set associative 4 way interleave multi-processor L2 directory with array access/cycle 2.5 nsec

G.M. Lattimore, M. Kumar, J. M. Poplawski
{"title":"A 2 cycle 1 Mbit 4 way set associative 4 way interleave multi-processor L2 directory with array access/cycle 2.5 nsec","authors":"G.M. Lattimore, M. Kumar, J. M. Poplawski","doi":"10.1109/MTDT.1995.518085","DOIUrl":null,"url":null,"abstract":"An experimental 2-cycle, 1-Mbit, 4-way set-associative, 4-way interleave, multiprocessor L2 directory with array access and cycle time equal to 2.5 ns is described. The directory function has three components: (1) address transmission and arbitration around a 17.3/spl times/17.3 chip (/spl sim/1/2 cycle), (2) directory array access (1 full cycle), and (3) tag compare (/spl sim/1/2 cycle). The directory array access design uses a combination of self-resetting and synchronous techniques that allow the array access to span 2 clock cycles even though the array can be pipelined at a single cycle frequency. The combination of synchronous techniques with self-resetting circuits allows the array cycle time to functionally change with the machine cycle time, yielding a greater sense-amplifier margin at longer cycles while maintaining the pipelining benefits of self-resetting circuitry. The process that the design is based upon is a 0.5-micron technology with a 0.25-micron effective gate length and 5 layers of metal. The SRAM cell size is 4.6/spl times/7.2 microns/sup 2/, a full 6-transistor cell with a single layer of poly, and a local area interconnect using a damascene tungsten process. The total directory area is 4 interleaves/spl times/5.6 mm/spl times/5.3 mm = 118.7 mm/sup 2/.","PeriodicalId":318070,"journal":{"name":"Records of the 1995 IEEE International Workshop on Memory Technology, Design and Testing","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Records of the 1995 IEEE International Workshop on Memory Technology, Design and Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.1995.518085","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

An experimental 2-cycle, 1-Mbit, 4-way set-associative, 4-way interleave, multiprocessor L2 directory with array access and cycle time equal to 2.5 ns is described. The directory function has three components: (1) address transmission and arbitration around a 17.3/spl times/17.3 chip (/spl sim/1/2 cycle), (2) directory array access (1 full cycle), and (3) tag compare (/spl sim/1/2 cycle). The directory array access design uses a combination of self-resetting and synchronous techniques that allow the array access to span 2 clock cycles even though the array can be pipelined at a single cycle frequency. The combination of synchronous techniques with self-resetting circuits allows the array cycle time to functionally change with the machine cycle time, yielding a greater sense-amplifier margin at longer cycles while maintaining the pipelining benefits of self-resetting circuitry. The process that the design is based upon is a 0.5-micron technology with a 0.25-micron effective gate length and 5 layers of metal. The SRAM cell size is 4.6/spl times/7.2 microns/sup 2/, a full 6-transistor cell with a single layer of poly, and a local area interconnect using a damascene tungsten process. The total directory area is 4 interleaves/spl times/5.6 mm/spl times/5.3 mm = 118.7 mm/sup 2/.
一个2周期1 Mbit 4路集关联4路交错多处理器L2目录与数组访问/周期2.5 nsec
描述了一个实验的2周期、1 mbit、4路集合关联、4路交错、阵列访问的多处理器L2目录,周期时间为2.5 ns。目录功能有三个组成部分:(1)围绕17.3/spl times/17.3芯片的地址传输和仲裁(/spl sim/1/2周期),(2)目录阵列访问(1个完整周期),(3)标签比较(/spl sim/1/2周期)。目录阵列访问设计结合了自复位和同步技术,允许阵列访问跨越2个时钟周期,即使阵列可以以单个周期频率管道化。同步技术与自复位电路的结合允许阵列周期时间随着机器周期时间的变化而变化,在更长的周期内产生更大的感测放大器裕度,同时保持自复位电路的流水线优势。该设计基于的工艺是一个0.5微米的技术,0.25微米的有效栅长和5层金属。SRAM电池尺寸为4.6/spl倍/7.2微米/sup 2/,具有单层poly的完整6晶体管电池,以及使用damascene钨制程的局部互连。总目录面积为4个交错/spl倍/5.6 mm/spl倍/5.3 mm = 118.7 mm/sup 2/。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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