Nullors in finding/modifying transistor parameters, blindly

R. Hashemian
{"title":"Nullors in finding/modifying transistor parameters, blindly","authors":"R. Hashemian","doi":"10.1109/INFOCT.2018.8356863","DOIUrl":null,"url":null,"abstract":"Rapid growth in electronic technology makes it difficult to keep track of the device modeling for linear analysis and design. This is particularly hard for MOS transistors. The problem is even more crucial for training engineering students, where they need to be able to hand calculate, put it into circuit format and estimate the design parameters. With transistors model parameters that may run into pages for today's nanotechnology, manually identify the model components and come up with linear equivalent circuits is not easy although it may be a routine data crunching procedure for a modern circuit simulator. One way to get around the problem is to follow two paths. First simulate, or experiment with, the circuit in its original (nonlinear) form, and keep it as the “model”. In the second step, adopt a proper linearizing scheme for the transistors manually, and then modify the model parameters based on the responses received from the model circuit. In our proposed method we do exactly this by using FNPs to modify the parameters in the linearized circuit until the response from the model and that of the linearized circuit fit together.","PeriodicalId":376443,"journal":{"name":"2018 International Conference on Information and Computer Technologies (ICICT)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Information and Computer Technologies (ICICT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INFOCT.2018.8356863","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Rapid growth in electronic technology makes it difficult to keep track of the device modeling for linear analysis and design. This is particularly hard for MOS transistors. The problem is even more crucial for training engineering students, where they need to be able to hand calculate, put it into circuit format and estimate the design parameters. With transistors model parameters that may run into pages for today's nanotechnology, manually identify the model components and come up with linear equivalent circuits is not easy although it may be a routine data crunching procedure for a modern circuit simulator. One way to get around the problem is to follow two paths. First simulate, or experiment with, the circuit in its original (nonlinear) form, and keep it as the “model”. In the second step, adopt a proper linearizing scheme for the transistors manually, and then modify the model parameters based on the responses received from the model circuit. In our proposed method we do exactly this by using FNPs to modify the parameters in the linearized circuit until the response from the model and that of the linearized circuit fit together.
盲目地查找/修改晶体管参数时的零值
电子技术的快速发展使得线性分析和设计的器件建模难以跟踪。这对于MOS晶体管来说尤其困难。这个问题对于培养工科学生来说更为重要,因为他们需要能够手工计算,将其转换成电路格式并估计设计参数。对于今天的纳米技术来说,晶体管的模型参数可能会跑到几页纸上,手动识别模型组件并提出线性等效电路并不容易,尽管这可能是现代电路模拟器的常规数据处理过程。解决这个问题的一种方法是遵循两条路径。首先用电路的原始(非线性)形式进行模拟或实验,并将其作为“模型”。第二步,手动对晶体管采用适当的线性化方案,然后根据模型电路接收到的响应修改模型参数。在我们提出的方法中,我们正是通过使用FNPs来修改线性化电路中的参数,直到模型的响应与线性化电路的响应匹配在一起。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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