{"title":"A Systolic Parallel Multiplier over GF(3m) Using Neuron-MOS DLC","authors":"O. Mirmotahari, Y. Berg","doi":"10.1109/ISMVL.2004.1319932","DOIUrl":null,"url":null,"abstract":"In this paper, a parallel input/output modulo multiplier, which is applied to the AOTP (all one or two polynomials) multiplicative algorithm over GF(3/sup m/), has been proposed using a neuron-MOS down-literal circuit in voltage mode. The three-valued input of the proposed multiplier is modulated by using a neuron-MOS down-literal circuit and the multiplication and addition gates are implemented by the selecting of the three-valued input signals transformed by the module. The proposed circuits are simulated with the electrical parameter of a standard 0.35 /spl mu/m CMOS N-well doubly-poly four-metal technology and a single +3 V supply voltage. In the simulation result, the multiplier shows 4 /spl mu/W power consumption and 3 MHz sampling rate and maintains a output voltage level within /spl plusmn/0.1 V.","PeriodicalId":284925,"journal":{"name":"IEEE International Symposium on Multiple-Valued Logic","volume":"138 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Symposium on Multiple-Valued Logic","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISMVL.2004.1319932","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, a parallel input/output modulo multiplier, which is applied to the AOTP (all one or two polynomials) multiplicative algorithm over GF(3/sup m/), has been proposed using a neuron-MOS down-literal circuit in voltage mode. The three-valued input of the proposed multiplier is modulated by using a neuron-MOS down-literal circuit and the multiplication and addition gates are implemented by the selecting of the three-valued input signals transformed by the module. The proposed circuits are simulated with the electrical parameter of a standard 0.35 /spl mu/m CMOS N-well doubly-poly four-metal technology and a single +3 V supply voltage. In the simulation result, the multiplier shows 4 /spl mu/W power consumption and 3 MHz sampling rate and maintains a output voltage level within /spl plusmn/0.1 V.