NANDFlashSim: Intrinsic latency variation aware NAND flash memory system modeling and simulation at microarchitecture level

Myoungsoo Jung, E. Wilson, D. Donofrio, J. Shalf, M. Kandemir
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引用次数: 50

Abstract

As NAND flash memory becomes popular in diverse areas ranging from embedded systems to high performance computing, exposing and understanding flash memory's performance, energy consumption, and reliability becomes increasingly important. Moreover, with an increasing trend towards multiple-die, multiple-plane architectures and high speed interfaces, high performance NAND flash memory systems are expected to continue to scale. This scaling should further reduce costs and thereby widen proliferation of devices based on the technology. However, when designing NAND flash-based devices, making decisions about the optimal system configuration is non-trivial because NAND flash is sensitive to a large number of parameters, and some parameters exhibit significant latency variations. Such parameters include varying architectures such as multi-die and multi-plane, and a host of factors that affect performance, energy consumption, diverse node technology, and reliability. Unfortunately, there are no public domain tools for high-fidelity, microarchitecture level NAND flash memory simulation in existence to assist with making such decisions. Therefore, we introduce NANDFlashSim; a latency variation-aware, detailed, and highly configurable NAND flash simulation model. NANDFlashSim implements a detailed timing model for operations in sixteen state-of-the-art NAND flash operation mode combinations. In addition, NANDFlashSim models energies and reliability of NAND flash memory based on statistics. From our comprehensive experiments using NANDFlashSim, we found that 1) most read cases were unable to leverage the highly-parallel internal architecture of NAND flash regardless of the NAND flash operation mode, 2) the main source of this performance bottleneck is I/O bus activity, not NAND flash activity itself, 3) multi-level-cell NAND flash provides lower I/O bus resource contention than single-level-cell NAND flash, but the resource contention becomes a serious problem as the number of die increases, and 4) preference to employ many dies rather than to employ many planes promises better performance in disk-friendly real workloads. The simulator can be downloaded from http://www.cse.psu.edu/~mqj5086/nfs.
NANDFlashSim:内在延迟变化感知的NAND闪存系统微架构级建模和仿真
随着NAND闪存在从嵌入式系统到高性能计算等各个领域的流行,揭示和理解闪存的性能、能耗和可靠性变得越来越重要。此外,随着多芯片、多平面架构和高速接口的发展趋势,高性能NAND闪存系统有望继续扩大规模。这种规模将进一步降低成本,从而扩大基于该技术的设备的扩散。然而,在设计基于NAND闪存的设备时,由于NAND闪存对大量参数很敏感,并且一些参数表现出显著的延迟变化,因此做出关于最佳系统配置的决策是非常重要的。这些参数包括多模、多平面等不同架构,以及影响性能、能耗、不同节点技术和可靠性的一系列因素。不幸的是,目前还没有用于高保真度、微架构级NAND闪存模拟的公共领域工具来帮助做出这样的决定。因此,我们引入NANDFlashSim;一个延迟变化感知,详细,高度可配置的NAND闪存仿真模型。NANDFlashSim实现了16个最先进的NAND闪存操作模式组合的详细时序模型。此外,NANDFlashSim基于统计对NAND闪存的能量和可靠性进行了建模。从我们使用NANDFlashSim的综合实验中,我们发现1)大多数读取案例无法利用NAND闪存的高度并行内部架构,无论NAND闪存的操作模式如何;2)这种性能瓶颈的主要来源是I/O总线活动,而不是NAND闪存活动本身;3)多级单元NAND闪存提供比单级单元NAND闪存更低的I/O总线资源争用。但是,随着die数量的增加,资源争用成为一个严重的问题,并且4)在磁盘友好型实际工作负载中,优先使用多个die而不是使用多个plane可以保证更好的性能。模拟器可以从http://www.cse.psu.edu/~mqj5086/nfs下载。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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