An Improved 1/f Noise Model for FinFETs Accommodating Self-Heating Behaviors

Abstract

Due to miniature dimension and limited thermal conductivity of silicon material, the performance of FinFETs is strongly influenced by self-heating effect, and is not suitable for conventional 1/f noise models. This study presents a new 1/f noise model for FinFETs to accommodate device temperature rise due to self-heating. This model can more realistically characterize the performance of small-size devices.