Idan Shem Tov, B. Mukherjee, J. Hayon, Laura Hargreaves, A. Shluger, Y. Rosenwaks
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引用次数: 0
Abstract
A palladium (Pd) functionalized electrostatically formed nanowire (EFN) sensor, a silicon-on-insulator (SOI) based multi-gate transistor, has proven to be an ultra-sensitive platform for hydrogen (H2) sensing. This EFN includes a Pd– SiO2–Silicon, a metal-oxide-semiconductor (MOS) structure which is studied here in detail. We compare the EFN threshold voltage shift (∆VTH) due to H2 adsorption, to the calculated ∆VTH due to dipoles placed at the Pd/SiO2 interface of the EFN device. We show that the potential drop at the Pd/SiO2 interface is responsible for the ultra-sensitive hydrogen sensing of the EFN.
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