A D-Band Up-Conversion Mixer With 7.5 dB Gain and 40 dB LO-RF Isolation in 65-nm CMOS Technology

Abstract

This paper presents a $D$-band up-conversion mixer with 7.5 dB gain and 40 dB LO-RF isolation by using 65-nm CMOS technology. The proposed up-conversion mixer adopts double-balanced Gilbert cell with negative resistance compensation (NRC) and resistive-feedback amplifier (RFA) to improve conversion gain (CG). At LO and RF ports, the transformer balun is designed to realize mutual transformation between single-ended signal and differential signal. The output P1dB of the proposed mixer is −6dBm, the average LO-RF isolation is less than −40dB at 139~151GHz. The compact chip size is 480 × 310 μm2 including all pads. The proposed mixer dissipates total DC power consumption of 9mW at 1.2-V supply voltage.