Issues in NiSi-gated FDSOI device integration

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269317

J. Kedzierski, D. Boyd, Ying Zhang, M. Steen, F. Jamin, J. Benedict, M. Ieong, W. Haensch

引用次数: 42

Abstract

Thin-body fully depleted silicon on insulator (FDSOI) devices with NiSi metal gates were fabricated with gate lengths down to 20 nm. Specific issues in the integration of the NiSi-gated FDSOI devices were investigated, in particular: gate CMP, the phase stability of the nickel silicide, and parasitic resistance.

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nisi门控FDSOI器件集成中的问题

制备了具有NiSi金属栅极的薄体全贫绝缘体硅(FDSOI)器件，栅极长度可达20 nm。研究了nisi门控FDSOI器件集成中的具体问题，特别是栅极CMP、硅化镍的相稳定性和寄生电阻。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE International Electron Devices Meeting 2003

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