High power external cavity semiconductor laser with wavelength tuning over C, L, and S-bands using single-angled-facet gain chip

Abstract

An InP-based single-angled-facet (SAF) gain chip comprised of a curved ridge waveguide is used to make an external cavity semiconductor laser. Wide wavelength tuning over C, L, and S-bands (155 nm) is demonstrated with an output power of more than 80 mW over the entire tuning range and a peak output power of 130 mW.