{"title":"Integrated 0.35 µm BiCMOS DC-DC Boost Converter","authors":"Chan-Soo Lee, Nam-Soo Kim, Hyoung-Ho Ko","doi":"10.1109/EMS.2011.65","DOIUrl":null,"url":null,"abstract":"The simulation and experimental study of current-mode DC-DC boost converter is presented in this paper The DC-DC converter is designed with a standard 0.35µm BiCMOS process. The off-chip LC filter is operated with the inductance of 1mH and capacitance of 100µF. The simulation results show the high performance DC-DC boost converter. The output voltage from simulation is obtained to be 5.8V with ripple ratio of 1.5%. The result corresponds with the experimental result within 5% error. The sensing current is obtained to be within 1mA and follows to fit the order of the aspect ratio between sensing and power MOSFET.","PeriodicalId":131364,"journal":{"name":"2011 UKSim 5th European Symposium on Computer Modeling and Simulation","volume":"226 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 UKSim 5th European Symposium on Computer Modeling and Simulation","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMS.2011.65","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The simulation and experimental study of current-mode DC-DC boost converter is presented in this paper The DC-DC converter is designed with a standard 0.35µm BiCMOS process. The off-chip LC filter is operated with the inductance of 1mH and capacitance of 100µF. The simulation results show the high performance DC-DC boost converter. The output voltage from simulation is obtained to be 5.8V with ripple ratio of 1.5%. The result corresponds with the experimental result within 5% error. The sensing current is obtained to be within 1mA and follows to fit the order of the aspect ratio between sensing and power MOSFET.