Power Transistor 2N3055 as a Solar Cell Device

Abstract

The abundance power radiated by the sun can be converted into alternative electric energy. The proposed method in this paper is by utilizing the transistor waste type 2N3055. The transistor contains photocell that can convert energy radiated by the sun into electricity. The 2N3055 type of transistor composed by Aluminum (Al) 45.55%, Carbon (C) 32.40 %, Nb (Niobium) 13.42 %, Zr (Zirconium) 7.02 %, and O (Oxygen) 1,61 %, this data is provided by SEM-EDX analysis. The experiment was conducted at 10.00 AM, 12.00 PM and 02.00 PM. The experimental results show that the maximum energy is acquired at 12.00 PM since at 12.00 PM the position of the sun and the earth are at the smallest angle. The maximum power conversion is obtained when the sun is perpendicular to the earth position at 12.00 PM. The maximum power acquired is 3.55 watt during the radiation intensity of 51729 lux.