A SiGe sub-harmonic mixer for millimeter-wave applications

2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI:10.1109/EMICC.2007.4412652

B. Perumana, S. Chakraborty, S. Sarkar, Procheta Sen, D. Yeh, A. Raghavan, D. Dawn, Chang-Ho Lee, S. Pinel, J. Laskar

引用次数: 6

Abstract

A SiGe sub-harmonic down-conversion mixer using a novel active anti-parallel diode pair is presented for millimeter-wave applications. The proposed architecture can help reduce conversion loss and also lower the required local oscillator power. With an LO power of 0 dBm, the measured 2times conversion gain varies from -5 to -7.8 dB in the 50 to 65 GHz range. Compared to earlier reports of millimeter-wave SiGe and GaAs sub-harmonic mixers requiring 5 to 10 dBm of LO power, this circuit achieves similar conversion loss with an LO power as low as -7.5 dBm, while consuming only 0.5 mW of DC power.

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用于毫米波应用的SiGe次谐波混频器

提出了一种采用新型有源反并联二极管对的SiGe次谐波下变频混频器，用于毫米波应用。所提出的架构有助于减少转换损耗，也降低了所需的本地振荡器功率。在LO功率为0 dBm的情况下，测量到的2倍转换增益在50至65 GHz范围内从-5到-7.8 dB变化。与先前报道的毫米波SiGe和GaAs次谐波混频器需要5至10 dBm的LO功率相比，该电路在LO功率低至-7.5 dBm的情况下实现了类似的转换损耗，同时仅消耗0.5 mW的直流功率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 European Microwave Integrated Circuit Conference

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