R. Stoklas, D. Gregušová, M. Blaho, K. Cico, K. Frohlich, J. Novák, P. Kordos
{"title":"Gate leakage reduction of AlGaN/GaN MOS-HFETs with HfO2 prepared by ALD","authors":"R. Stoklas, D. Gregušová, M. Blaho, K. Cico, K. Frohlich, J. Novák, P. Kordos","doi":"10.1109/ASDAM.2014.6998664","DOIUrl":null,"url":null,"abstract":"The gate leakage reduction about four to seven orders of magnitude for HfO2 MOSHFETs (~10-10A/mm at -15V) prepared by Atomic Layer Deposition (ALD) technique at 350°C with and without oxygen-plasma treatment in comparison to HFET, was observed. A lower hysteresis evaluated from c-V curves of MOSHFET with oxygen-plasma treatment (OPT) after annealing (500°C for 15 min in N2) was found. The C-V curve for MOSHFET without OPT exhibited an increase of capacitance at negative voltages which corresponds with hypothesis of the interfacial layer formation at the oxide/GaN interface. And also, the high density of oxide interface states affects adversely the interface quality, like as the C-V hysteresis, leakage current, hot electron phenomena, etc.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2014.6998664","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The gate leakage reduction about four to seven orders of magnitude for HfO2 MOSHFETs (~10-10A/mm at -15V) prepared by Atomic Layer Deposition (ALD) technique at 350°C with and without oxygen-plasma treatment in comparison to HFET, was observed. A lower hysteresis evaluated from c-V curves of MOSHFET with oxygen-plasma treatment (OPT) after annealing (500°C for 15 min in N2) was found. The C-V curve for MOSHFET without OPT exhibited an increase of capacitance at negative voltages which corresponds with hypothesis of the interfacial layer formation at the oxide/GaN interface. And also, the high density of oxide interface states affects adversely the interface quality, like as the C-V hysteresis, leakage current, hot electron phenomena, etc.