High resolution EL2 and resistivity topography of SI GaAs wafers

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI:10.1109/SIM.1998.785068

M. Wickert, R. Stibal, P. Hiesinger, W. Jantz, J. Wagner, M. Jurisch, U. Kretzer, B. Weinert

{"title":"High resolution EL2 and resistivity topography of SI GaAs wafers","authors":"M. Wickert, R. Stibal, P. Hiesinger, W. Jantz, J. Wagner, M. Jurisch, U. Kretzer, B. Weinert","doi":"10.1109/SIM.1998.785068","DOIUrl":null,"url":null,"abstract":"The mesoscopic inhomogeneity of LEC grown semi-insulating (SI) GaAs wafers has been investigated with EL2/spl deg/ absorption topography (EAT), photoluminescence topography (PLT), point contact topography (PCT) and contactless resistivity mapping (COREMA). Significant progress with respect to sensitivity of EAT and lateral resolution of COREMA has been achieved. High resolution topograms of wafers cut from ingots subject to standard and modified annealing procedures are presented. Direct comparison of EL2/spl deg/ and resistivity topograms reveals significant differences in the mesoscopic contrast and a contrast reversal for modified annealing. These observations can be explained very satisfactorily by assuming mesoscopic inhomogeneity of the intrinsic acceptor concentration which is modified during annealing. A model involving generation of Ga vacancies by dissolution of As/sub Ga/ antisites and gettering of the interstitial As at precipitates is presented and discussed.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1998.785068","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

Abstract

The mesoscopic inhomogeneity of LEC grown semi-insulating (SI) GaAs wafers has been investigated with EL2/spl deg/ absorption topography (EAT), photoluminescence topography (PLT), point contact topography (PCT) and contactless resistivity mapping (COREMA). Significant progress with respect to sensitivity of EAT and lateral resolution of COREMA has been achieved. High resolution topograms of wafers cut from ingots subject to standard and modified annealing procedures are presented. Direct comparison of EL2/spl deg/ and resistivity topograms reveals significant differences in the mesoscopic contrast and a contrast reversal for modified annealing. These observations can be explained very satisfactorily by assuming mesoscopic inhomogeneity of the intrinsic acceptor concentration which is modified during annealing. A model involving generation of Ga vacancies by dissolution of As/sub Ga/ antisites and gettering of the interstitial As at precipitates is presented and discussed.

查看原文本刊更多论文

SI - GaAs晶圆的高分辨EL2和电阻率形貌

采用EL2/spl度/吸收形貌(EAT)、光致发光形貌(PLT)、点接触形貌(PCT)和无接触电阻率成像(COREMA)研究了LEC生长半绝缘(SI) GaAs晶圆的介观非均匀性。在EAT的灵敏度和COREMA的横向分辨率方面取得了重大进展。本文介绍了经过标准退火和改进退火程序后从铸锭中切割出的高分辨率晶圆形貌图。直接比较EL2/spl度/和电阻率形貌，发现在介观对比和改进退火的对比反转方面存在显著差异。假设本征受体浓度的介观不均匀性在退火过程中被改变，这些观察结果可以非常令人满意地解释。提出并讨论了一种通过溶解As/亚Ga/反位和吸附间隙As at析出相产生Ga空位的模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

自引率

0.00%

发文量