Prematched and Monolithic Amplifiers Covering 8-18 GHz

Abstract

The latest gallium arsenide field effect transistors designed for low noise, small signal applications up to Q-band exhibit large |S21|2, making the design of high gain, wideband amplifiers easier. High gains over relatively large bandwidths can be obtained with the devices tuned for maximum gain or minimum noise figure. This paper describes the use of such FETs in simple microwave matching circuits consisting of 'lumped' inductors and capacitors. This enables the realization of "internally matched transistors" contained in miniature microwave packages for direct insertion into microstrip circuitry, and monolithic amplifiers having the matching circuits "on chip".