L. C, Chethan T K, Nithish Pinto, Vedanth Pandit B R, Shobha Shankar, R. R.
{"title":"Advanced CMOS VLSI Technology for Low Power Analog System Design with High Gain","authors":"L. C, Chethan T K, Nithish Pinto, Vedanth Pandit B R, Shobha Shankar, R. R.","doi":"10.1109/icdcece53908.2022.9793203","DOIUrl":null,"url":null,"abstract":"This research article provides an insight about the important challenges involved in the low power analog system design using advanced CMOS VLSI approach. Reduction in the dimension of MOS base channel and reduction in gate oxide results in greater advancement in terms of area of the chip, operating speed, and reduction of power consumption (mainly in digital components). In other words, few disadvantage also exists in term of leakage of power, operating characteristics, and life of the IC. Also, advancement in scaled approach or technology reduces the supply voltage and it results in CMOS based VLSI analog system manufacturers to face new challenging solution to ensure required operating characteristics.","PeriodicalId":417643,"journal":{"name":"2022 IEEE International Conference on Distributed Computing and Electrical Circuits and Electronics (ICDCECE)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Distributed Computing and Electrical Circuits and Electronics (ICDCECE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icdcece53908.2022.9793203","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This research article provides an insight about the important challenges involved in the low power analog system design using advanced CMOS VLSI approach. Reduction in the dimension of MOS base channel and reduction in gate oxide results in greater advancement in terms of area of the chip, operating speed, and reduction of power consumption (mainly in digital components). In other words, few disadvantage also exists in term of leakage of power, operating characteristics, and life of the IC. Also, advancement in scaled approach or technology reduces the supply voltage and it results in CMOS based VLSI analog system manufacturers to face new challenging solution to ensure required operating characteristics.