Advanced CMOS VLSI Technology for Low Power Analog System Design with High Gain

L. C, Chethan T K, Nithish Pinto, Vedanth Pandit B R, Shobha Shankar, R. R.
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引用次数: 1

Abstract

This research article provides an insight about the important challenges involved in the low power analog system design using advanced CMOS VLSI approach. Reduction in the dimension of MOS base channel and reduction in gate oxide results in greater advancement in terms of area of the chip, operating speed, and reduction of power consumption (mainly in digital components). In other words, few disadvantage also exists in term of leakage of power, operating characteristics, and life of the IC. Also, advancement in scaled approach or technology reduces the supply voltage and it results in CMOS based VLSI analog system manufacturers to face new challenging solution to ensure required operating characteristics.
用于高增益低功耗模拟系统设计的先进CMOS VLSI技术
本文介绍了采用先进的CMOS VLSI方法设计低功耗模拟系统所面临的重要挑战。MOS基极沟道尺寸的减小和栅极氧化物的减少,在芯片面积、运行速度和功耗(主要是数字元件)方面取得了更大的进步。换句话说,在功率泄漏,工作特性和IC寿命方面也存在一些缺点。此外,缩放方法或技术的进步降低了电源电压,这导致基于CMOS的VLSI模拟系统制造商面临新的具有挑战性的解决方案,以确保所需的工作特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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