A three-valued D-flip-flop and shift register using multiple-junction surface tunnel transistors

T. Uemura, T. Baba
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引用次数: 28

Abstract

A three-valued D-flip-flop (D-FF) circuit and a two-stage shift register built from InGaAs-based multiple-junction surface tunnel transistors (MJSTT) and Si-based metal-oxide-semiconductor field effect transistors (MOSFET) have been demonstrated. Due to the combination of the MJSTT's latching function and the MOSFET's switching function, the number of devices required for the D-FF circuit was greatly reduced to two from the thirty required for the FET-only circuit.
使用多结表面隧道晶体管的三值d触发器和移位寄存器
本文演示了由ingaas多结表面隧道晶体管(MJSTT)和si基金属氧化物半导体场效应晶体管(MOSFET)构建的三值D-FF电路和两级移位寄存器。由于MJSTT的锁存功能和MOSFET的开关功能的结合,D-FF电路所需的器件数量从仅fet电路所需的30个大大减少到2个。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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