{"title":"Design of Integrated Wideband Passive Band-pass Filter for WiMAX, WLAN and 5G Communication Systems using 180 nm Technology","authors":"Kamleshwari Sanga, R. Ghatak","doi":"10.1109/ICORT46471.2019.9069652","DOIUrl":null,"url":null,"abstract":"This paper presents an integrated circuit technology based passive band-pass filter for a wideband of 2-6 GHz frequency, which covers operating frequency of WLAN, WiMAX, and 5G communication. Proposed BPF is designed by cascading a 5th order elliptic LPF with 7th order Chebyshev HPF. The layout of the proposed schematic is implemented in UMC 180 nm CMOS technology. Results obtained from the simulation of the schematic as well as that of the post-layout simulation are in close agreement. It is found that the proposed BPF have suitable insertion loss, return loss, sharp cut off and compact chip area of 2 mm2. The schematic, layout, response and final specification of the proposed BPF are shown below. Here a single BPF can cover the functionality of multiple BPF working in multiband, hence reducing circuit complexity and size.","PeriodicalId":147815,"journal":{"name":"2019 International Conference on Range Technology (ICORT)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Range Technology (ICORT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICORT46471.2019.9069652","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents an integrated circuit technology based passive band-pass filter for a wideband of 2-6 GHz frequency, which covers operating frequency of WLAN, WiMAX, and 5G communication. Proposed BPF is designed by cascading a 5th order elliptic LPF with 7th order Chebyshev HPF. The layout of the proposed schematic is implemented in UMC 180 nm CMOS technology. Results obtained from the simulation of the schematic as well as that of the post-layout simulation are in close agreement. It is found that the proposed BPF have suitable insertion loss, return loss, sharp cut off and compact chip area of 2 mm2. The schematic, layout, response and final specification of the proposed BPF are shown below. Here a single BPF can cover the functionality of multiple BPF working in multiband, hence reducing circuit complexity and size.