High-throughput electron beam direct writing of VIA layers by character projection using character sets based on one-dimensional VIA arrays with area-efficient stencil design

R. Ikeno, T. Maruyama, T. Iizuka, S. Komatsu, M. Ikeda, K. Asada
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引用次数: 7

Abstract

Character projection (CP) is a high-speed mask-less exposure technique for electron-beam direct writing (EBDW). In CP exposure of VIA layers, higher throughput is realized if more VIAs are exposed in each EB shot, but it will result in huge number of VIA characters required for arbitrary VIA placement. We adopt one-dimensional VIA array as the basic CP character architecture to increase VIA numbers in an EB shot while saving the stencil area by superposed character arrangement. CP throughput is further improved by layout constraints for VIA placement in detail routing phase. Our experimental results give estimated EB shot counts less than 174G shot/wafer in 14nm technologies.
基于一维VIA阵列的高通量电子束直接写入,采用面积高效的模板设计
字符投影(CP)是一种用于电子束直写(EBDW)的高速无掩模曝光技术。在VIA层的CP曝光中,如果在每个EB镜头中曝光更多的VIA,则可以实现更高的吞吐量,但这将导致任意VIA放置所需的大量VIA字符。我们采用一维的VIA数组作为基本的CP字符结构,增加了EB镜头中的VIA数量,同时通过字符的叠加排列节省了模板面积。通过在详细路由阶段对VIA放置的布局约束,进一步提高了CP吞吐量。我们的实验结果表明,在14nm技术中,估计EB镜头数少于174G镜头/晶圆。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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