Practical next generation solution for stand-alone and embedded DRAM capacitor

Abstract

For the first time, MIS capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate are successfully demonstrated. The effective oxide thickness (EOT) of 21 /spl Aring/ with an acceptably low leakage current has been achieved for a cylinder-type MIS capacitor. The EOT of 21 /spl Aring/ is the smallest value reported for MIS capacitors with TiN electrodes regardless of dielectric material. We have confirmed the feasibility of reducing EOT in spite of the simple process without a pre-deposition treatment. HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is also useful for SIS capacitors and can satisfy the needs of MIM capacitors for the next generation without changing electrode material.