Suppressed Growth of Interlayer GeOxin Ge MOS Capacitors with Gate Dielectric Prepared in Wet NO Ambient

Abstract

Wet NO oxidation with wet N2anneal is used to grow GeON gate dielectric on Ge substrate. As compared to dry NO oxidation, negligible growth of GeOxinterlayer and thus a near-perfect GeON dielectric can be obtained by the wet NO oxidation. As a result, MOS capacitors prepared by this method show greatly reduced interface-state and oxide-charge densities and gate leakage current. This should be attributed to the hydrolysable property of GeOxin water-containing atmosphere.