Performance enhancement of single electron junction 1-bit full adder

Abstract

The focus of this paper is to study the reliability issue of single-electron tunneling (SET) technology using multi-island structure for 1-bit full adder circuit. A new set of parameters are proposed in this paper showing better sensitivity towards the random background charge (RBC). Impact of temperature and background charge on the performance parameters and voltage swing are also analyzed. Multi-island clique (K-3) structure is implemented and compared with the designs reported in the literature.