Impact of semiconductive shield quality on accelerated aging cable performance

Paul J. Brigandi, T. Person, P. Caronia, Erik Groot-Enzerink
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Abstract

Semiconductive shield quality is critical to the life expectancy of power cables in medium, high, and extra-high voltage classes. The material properties and cable performance under accelerated conditions were compared for different commercial semiconductive shield compounds. All of the semiconductive shield compositions were found to be crosslinkable, contain similar levels of carbon black to be conductive, meet volume resistivity and physical properties required by IEC specifications and considered suitable for MV cable applications. The cables made with compound containing more protrusions and total chemical impurities had a much shorter characteristic life, less retained breakdown strength even as low as 7.8 kV/mm, and would be expected to have much less reliability than the cable with high quality semiconductive shields. The combination of these critical performance factors clearly indicates that semiconductive shields of poor quality can drastically reduce the effectiveness of an insulation material to achieve an expected long lifetime cable.
半导体屏蔽质量对加速老化电缆性能的影响
半导电屏蔽质量对中、高压和特高压电缆的预期寿命至关重要。比较了不同商用半导体屏蔽化合物在加速条件下的材料性能和电缆性能。所有的半导体屏蔽成分都被发现是交联的,含有相似水平的炭黑导电,满足IEC规范要求的体积电阻率和物理性能,并被认为适合中压电缆应用。使用含有较多突出物和总化学杂质的化合物制成的电缆,其特性寿命较短,保留的击穿强度较低,甚至低至7.8 kV/mm,并且与使用高质量半导体屏蔽的电缆相比,其可靠性要差得多。这些关键性能因素的结合清楚地表明,质量差的半导体屏蔽可以大大降低绝缘材料的有效性,以实现预期的长寿命电缆。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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