2.3 V operation GaAs power MESFET with 68% power-added efficiency

Abstract

A state-of-the-art GaAs power MESFET operating at a drain bias of 2.3 V has been developed using the low-high doped channel structure. The device has 0.8-/spl mu/m gate length and 21-mm gate width. The power performance tested at a 2.3 V drain bias under 900 MHz operation frequency was output power of 31.3-dBm with 11.3-dB gain and 69-percent power-added efficiency. A third-order intercept point was evaluated to be 50.7-dBm. A Linearity Figure-of-Merit of 55.6 was recorded for 21-mm-wide FET.