Wavelength tuning of type-II “W” quantum well of interband cascade laser

International Conference on Photonics and Optical Engineering and the Annual West China Photonics Conference Pub Date : 2019-01-24 DOI:10.1117/12.2521757

Yi Zhang, Fu-Hui Shao, Chengao Yang, Shengwen Xie, Shu-Shan Huang, Ye Yuan, Jin-ming Shang, Yu Zhang, Ying-qiang Xu, H. Ni, Z. Niu

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引用次数: 1

Abstract

We report the wavelength tuning of type-II “W” quantum well of interband cascade laser. By changing the thickness of the InAs electron well, the wavelength of the active region is adjusted. We found that the whole 3-4 μm spectra can be realized and the intensity was basically the same by measuring the photoluminescence (PL) of the active region. It showed that the type-II “W” quantum well of interband cascade laser can achieve 3-4 μm range without attenuation. In addition, we calculated the wavelength of quantum well of different InAs thickness by the 8-band k·p method. And we found that the wavelength of the active region varies with the thickness of the InAs electron well, which is consistent with the theory. In addition, the measured wavelength was different from the theoretical wavelength, which may be due to the As incorporation. The incorporation of As into the InGaSb layer will lead to blue shift in the wavelength.

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带间级联激光器ii型“W”量子阱波长调谐

报道了带间级联激光器ii型“W”量子阱的波长调谐。通过改变InAs电子的厚度，可以调节活性区的波长。通过测量活性区的光致发光(PL)，我们发现可以实现3 ~ 4 μm的全光谱，且强度基本一致。结果表明，带间级联激光器的ii型“W”量子阱可以达到3 ~ 4 μm的无衰减范围。此外，我们用8波段k·p方法计算了不同InAs厚度的量子阱波长。我们发现，活性区的波长随InAs电子厚度的变化有很好的变化，这与理论一致。此外，测量波长与理论波长存在差异，这可能是由于As的掺入。As掺入InGaSb层会导致波长的蓝移。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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International Conference on Photonics and Optical Engineering and the Annual West China Photonics Conference

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