Analysis of a mask-based nanowire decoder

Eric Rachlin, J. Savage, Benjamin Gojman
{"title":"Analysis of a mask-based nanowire decoder","authors":"Eric Rachlin, J. Savage, Benjamin Gojman","doi":"10.1109/ISVLSI.2005.17","DOIUrl":null,"url":null,"abstract":"A key challenge facing nanotechnologies will be controlling nanoarrays, two orthogonal sets of nanowires that form a crossbar, using a moderate number of mesoscale wires. Three methods have been proposed to use mesoscale wires to control individual nanowires. The first is based on nanowire differentiation during manufacture, the second makes random doped connections between nanowires and mesoscale wires, and the third, a mask-based approach, interposes high-K dielectric regions between nanowires and mesoscale wires. All three addressing schemes involve a stochastic step in their implementation. In this paper, we analyze the mask-based approach and show that a large number of mesoscale control wires is necessary for its realization.","PeriodicalId":158790,"journal":{"name":"IEEE Computer Society Annual Symposium on VLSI: New Frontiers in VLSI Design (ISVLSI'05)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Computer Society Annual Symposium on VLSI: New Frontiers in VLSI Design (ISVLSI'05)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISVLSI.2005.17","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

A key challenge facing nanotechnologies will be controlling nanoarrays, two orthogonal sets of nanowires that form a crossbar, using a moderate number of mesoscale wires. Three methods have been proposed to use mesoscale wires to control individual nanowires. The first is based on nanowire differentiation during manufacture, the second makes random doped connections between nanowires and mesoscale wires, and the third, a mask-based approach, interposes high-K dielectric regions between nanowires and mesoscale wires. All three addressing schemes involve a stochastic step in their implementation. In this paper, we analyze the mask-based approach and show that a large number of mesoscale control wires is necessary for its realization.
基于掩模的纳米线解码器分析
纳米技术面临的一个关键挑战将是控制纳米阵列,两组正交的纳米线形成一个横条,使用适量的中尺度线。提出了三种使用中尺度线来控制单个纳米线的方法。第一种是基于纳米线在制造过程中的分化,第二种是在纳米线和中尺度线之间随机掺杂连接,第三种是基于掩模的方法,在纳米线和中尺度线之间插入高k介电区域。所有三种寻址方案在其实现中都涉及随机步骤。在本文中,我们分析了基于掩模的方法,并证明了实现该方法需要大量的中尺度控制线。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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