A multichip on oxide of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications

Abstract

A 1.0 Gb/s 80 dB/spl Omega/ fully-differential TIA uses 0.25 /spl mu/m CMOS and multichip-on-oxide (MCO) process. MCO enables integration of PD, TIA, and planar inductors of Q=21.1 for shunt peaking on an oxidized silicon substrate. Interchannel crosstalk and power dissipation are <-40 dB and 27 mW, respectively. MCO and TIA chips are 5/spl times/5 mm/sup 2/ and 0.7/spl times/1 mm/sup 2/, respectively.