Ultra-high speed Direct Tunneling Memory (DTM) for embedded RAM applications

Abstract

Direct Tunneling Memory (DTM) with ultra-thin tunnel oxide and novel depleted floating gate (FG) has been demonstrated for embedded RAM applications. Fast programming (<10ns) at low voltage, together with its excellent charge retention (>10s) and large threshold voltage difference (>1.3V), has been achieved by utilizing the band bending at the FG/oxide interface in charge retention period. The depleted FG is also effective to suppress the degradation of program/erase speed caused by the gate re-oxidation process. As a consequence, newly proposed DTM is a promising candidate for cost-effective and scalable embedded RAM instead of a conventional embedded DRAM.