Thermal analysis of white light-emitting diodes structures with hybrid quantum dots/phosphor layer

Bin Xie, Yanhua Cheng, J. Hao, Xingjian Yu, Qi Chen, Run Hu, Kai Wang, Xiaobing Luo
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Abstract

This study quantitatively analyzed the optical and thermal performances of remote quantum dots (QDs)-based white light-emitting diodes (QDs-WLEDs) with the same spectra power distribution (SPD) but reverse packaging structures. The output optical power and PL spectra were measured and analyzed by an integrating sphere system, and the temperature fields were simulated by combing optical measurement with thermal simulation, finally the temperature fields were validated by infrared thermal imager. It was found that when achieved identical SPD, the QDs-on-phosphor type achieved LE of 112.2 lm/W, while the phosphor-on-QDs type demonstrated lower LE of 101.4 lm/W. Moreover, the QDs-on-phosphor type generated less heat than that of another, consequently the highest temperature in the QDs-on-phosphor type was lower than another, and the temperature difference can reach 11.2°C at driving current of 160 mA. Therefore, the QDs-on-phosphor type is an optimal packaging architecture for higher optical efficiency and lower device temperature.
混合量子点/荧光粉层白光发光二极管结构的热分析
本研究定量分析了具有相同光谱功率分布(SPD)但封装结构相反的远程量子点(QDs)白光发光二极管(QDs- wled)的光学和热性能。利用积分球系统对输出光功率和PL光谱进行了测量和分析,采用光学测量和热模拟相结合的方法对温度场进行了模拟,最后利用红外热像仪对温度场进行了验证。结果表明,在相同SPD条件下,qds -on- phospphos -on- qds -on- qds - LE为112.2 lm/W,而qds -on- qds - LE较低,为101.4 lm/W。此外,QDs-on-phosphor类型产生的热量比另一种类型少,因此QDs-on-phosphor类型的最高温度低于另一种类型,在驱动电流为160 mA时,温差可达11.2°C。因此,基于荧光粉的qds是一种具有更高光效率和更低器件温度的最佳封装架构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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