Investigation of the microstructure and phase composition of ceramics based on silicon carbide irradiated with low-energy helium ions

Abstract

The effect of irradiation with helium ions with an energy of 40 keV and doses of 1·1014 – 2·1017 cm–2 on the microstructure and phase composition of ceramics based on silicon carbide has been studied. The irradiation growth of the 6H–SiC crystal lattice was revealed. However, at a dose of 1·1016 cm–2, there is a decrease in deformation associated with the formation of gas-vacancy clusters, which are sinks for radiation defects. Amorphization of the near-surface layer has been established.