Very low noise characteristics of AlGaAs/InGaAs HEMTs with wide head T-gate

Abstract

The parasitic gate resistance is one of the most important factors in determining the noise performance of HEMTs. In order to reduce the gate resistance, T-shaped gates with large cross-sectional area are required. In this study, we report a AlGaAs/InGaAs pseudomorphic HEMT with a newly developed wide head T-gate fabricated by using dose split electron beam lithography and selective gate recess etching.