{"title":"T/sub BD/ prediction from measurements at low field and room temperature using a new estimator","authors":"A. Ghetti, J. Bude, G. Weber","doi":"10.1109/VLSIT.2000.852832","DOIUrl":null,"url":null,"abstract":"We present a new method to predict oxide breakdown from measurements at low voltage and room temperature. The method is based on tunneling into interface states (TEDit). We show that TEDit correlates to breakdown. Then we exploit this correlation to predict oxide lifetime.","PeriodicalId":268624,"journal":{"name":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2000.852832","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
We present a new method to predict oxide breakdown from measurements at low voltage and room temperature. The method is based on tunneling into interface states (TEDit). We show that TEDit correlates to breakdown. Then we exploit this correlation to predict oxide lifetime.