Millimeter-Wave Front-End Components in Metamorphic HEMT Technology

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282742

M. Schlechtweg, I. Kallfass, A. Tessmann, C. Schworer, A. Leuther

引用次数: 2

Abstract

We report on the latest results of millimeter-wave IC components realized using IAF's metamorphic HEMT technology, ranging from small-signal low-noise amplifiers to nonlinear applications such as power amplifiers and frequency converters. A G-band four-stage cascode amplifier MMIC achieves 21 dB gain at 220 GHz. At 155 GHz, a two-stage cascode design reaches 15 dB gain with a noise figure of 4 dB. Frequency conversion is demonstrated in a doubler, achieving more than 0 dBm output power over the frequency range from 180 to 220 GHz. The same doubler is combined with a resistive mixer to form a G-band down-converter with as low as 10 dB conversion loss. At 94 GHz, a two-stage power amplifier MMIC achieves 23.3 dBm

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变质HEMT技术中的毫米波前端元件

我们报告了使用IAF的变质HEMT技术实现的毫米波IC元件的最新成果，从小信号低噪声放大器到非线性应用，如功率放大器和变频器。g波段四级级联放大器MMIC在220 GHz时实现21 dB增益。在155 GHz时，两级级联码的增益达到15 dB，噪声系数为4 dB。频率转换演示在一个倍频器中，在180至220 GHz的频率范围内实现超过0 dBm的输出功率。同样的倍频器与一个电阻混频器相结合，形成一个低至10db转换损耗的g波段下变频器。在94 GHz时，两级功率放大器MMIC达到23.3 dBm

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2006 European Microwave Integrated Circuits Conference

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